Infineon · FETs & Power MOSFETs · MPN IPB044N15N5ATMA1
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| Drain to Source Voltage | 150V |
|---|---|
| Gate Charge(Qg) | 100nC@10V |
| Output Capacitance(Coss) | 2nF |
| Current - Continuous Drain(Id) | 174A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.6V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 4.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8nF |
150V 174A 4.6V 300W 4.4mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS