Infineon · FETs & Power MOSFETs · MPN IPB042N10N3G
No reviews yet — be the first to review Infineon IPB042N10N3G.
| Gate Charge(Qg) | 117nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 137A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF |
| RDS(on) | 4.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.41nF |
N-Channel 100V 137A 214W Surface Mount TO-263-3