Infineon · FETs & Power MOSFETs · MPN IPB042N10N3 G E8187
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 137A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF |
| RDS(on) | 3.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.32nF |
100V 137A 2.7V 214W 3.6mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS