Infineon IPB040N08NF2SATMA1

Infineon · FETs & Power MOSFETs · MPN IPB040N08NF2SATMA1

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)81nC@10V
Current - Continuous Drain(Id)107A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)5.6mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)3.8nF
TypeN-Channel

Technical details

N-Channel 80V 107A 150W Surface Mount TO-263-3

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