Infineon · FETs & Power MOSFETs · MPN IPB03N03LB G
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 59nC@5V |
| Output Capacitance(Coss) | 2.708nF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 384pF |
| RDS(on) | 3.9mΩ@4.5V |
| Input Capacitance(Ciss) | 7.624nF |
| Type | N-Channel |
30V 80A 2V 150W 3.9mΩ@4.5V N-Channel TO-263-3 Single FETs, MOSFETs RoHS