Infineon IPB03N03LAG

Infineon · FETs & Power MOSFETs · MPN IPB03N03LAG

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)57nC@5V
Output Capacitance(Coss)2.967nF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)457pF
RDS(on)4.1mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)7.027nF
TypeN-Channel

Technical details

25V 80A 2V 150W 4.1mΩ@4.5V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS

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