Infineon · FETs & Power MOSFETs · MPN IPB039N10N3GE8197ATMA1
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 117nC@10V |
| Output Capacitance(Coss) | 1.61nF |
| Current - Continuous Drain(Id) | 160A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF |
| RDS(on) | 3.9mΩ@10V |
| Input Capacitance(Ciss) | 8.41nF |
| Type | N-Channel |
100V 160A 3.5V 214W 3.9mΩ@10V N-Channel TO-263-7 Single FETs, MOSFETs RoHS