Infineon · FETs & Power MOSFETs · MPN IPB039N10N3 G E8187
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | - |
| Current - Continuous Drain(Id) | - |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | - |
| Number | - |
| Input Capacitance(Ciss) | - |
TO-263-7 Single FETs, MOSFETs RoHS