Infineon · FETs & Power MOSFETs · MPN IPB038N12N3GATMA1
No reviews yet — be the first to review Infineon IPB038N12N3GATMA1.
| Gate Charge(Qg) | 211nC@10V |
|---|---|
| Drain to Source Voltage | 120V |
| Output Capacitance(Coss) | 1.76nF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF |
| RDS(on) | 4.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13.8nF |
| Type | N-Channel |
N-Channel 120V 120A 300W Surface Mount TO-263-3