Infineon · FETs & Power MOSFETs · MPN IPB035N10NF2SATMA1
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| Gate Charge(Qg) | 69nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 151A |
| Output Capacitance(Coss) | 750pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 214W |
| RDS(on) | 3.2mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 34pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.9nF |
| Type | N-Channel |
100V 151A 3V 214W 3.2mΩ@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS