Infineon · FETs & Power MOSFETs · MPN IPB035N08N3GATMA1
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 117nC@10V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 59pF |
| RDS(on) | 3.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.11nF |
N-Channel 80V 100A 214W Surface Mount TO-263-3