Infineon · FETs & Power MOSFETs · MPN IPB034N06N3 G
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| Gate Charge(Qg) | 130nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 167W |
| Reverse Transfer Capacitance (Crss@Vds) | 58pF |
| RDS(on) | 3.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11nF |
N-Channel 60V 100A 167W Surface Mount TO-263-6