Infineon IPB034N06L3GATMA1

Infineon · FETs & Power MOSFETs · MPN IPB034N06L3GATMA1

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Specifications

Gate Charge(Qg)79nC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)2.3nF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation167W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)3.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)13nF
TypeN-Channel

Technical details

60V 90A 2.2V 167W 3.7mΩ@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS

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