Infineon IPB033N10N5LF

Infineon · FETs & Power MOSFETs · MPN IPB033N10N5LF

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Specifications

Gate Charge(Qg)102nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)108A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.1V
Pd - Power Dissipation179W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)3.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)460pF

Technical details

N-Channel 100V 108A 179W Surface Mount TO-263-3

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