Infineon · FETs & Power MOSFETs · MPN IPB032N10N5
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| Gate Charge(Qg) | 76nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 829pF |
| Current - Continuous Drain(Id) | 166A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 187W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 3.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.97nF |
| Type | N-Channel |
100V 166A 3.8V 187W 3.2mΩ@10V 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS