Infineon · FETs & Power MOSFETs · MPN IPB031NE7N3 G
No reviews yet — be the first to review Infineon IPB031NE7N3 G.
| Gate Charge(Qg) | 117nC@10V |
|---|---|
| Drain to Source Voltage | 75V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 66pF |
| RDS(on) | 3.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.13nF |
75V 100A 3.8V 214W 3.1mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS