Infineon · FETs & Power MOSFETs · MPN IPB031N08N5ATMA1
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| Gate Charge(Qg) | 69nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 1.03nF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 167W |
| Reverse Transfer Capacitance (Crss@Vds) | 63pF |
| RDS(on) | 3.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.24nF |
| Type | N-Channel |
N-Channel 80V 120A 167W Surface Mount TO-263-3