Infineon · FETs & Power MOSFETs · MPN IPB030N08N3 G
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 160A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 59pF |
| RDS(on) | 2.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.1nF |
| Type | N-Channel |
80V 160A 2.8V 214W 2.5mΩ@10V 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS