Infineon · FETs & Power MOSFETs · MPN IPB029N15NM6ATMA1
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| Output Capacitance(Coss) | 2.3nF |
|---|---|
| Pd - Power Dissipation | 395W |
| Configuration | - |
| Gate Charge(Qg) | 105nC |
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 2.3mΩ@15V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.6nF |
395W 150V 3.5V 2.3mΩ@15V 1 N-channel N-Channel PG-TO263-3 Single FETs, MOSFETs RoHS