Infineon · FETs & Power MOSFETs · MPN IPB027N10N5ATMA1
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| Gate Charge(Qg) | 112nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.57nF |
| Current - Continuous Drain(Id) | 166A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 93pF |
| RDS(on) | 2.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.3nF |
| Type | N-Channel |
N-Channel 100V 166A 250W Surface Mount TO-263-3