Infineon · FETs & Power MOSFETs · MPN IPB027N10N3 G
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| Gate Charge(Qg) | 206nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 2.58nF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 69pF |
| RDS(on) | 2.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 14.8nF |
| Type | N-Channel |
N-Channel 100V 120A 300W Surface Mount TO-263-3