Infineon · FETs & Power MOSFETs · MPN IPB026N10NF2SATMA1
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 154nC@10V |
| Current - Continuous Drain(Id) | 162A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 3.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 49pF |
| RDS(on) | 2.65mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.3nF |
N-Channel 100V 162A 3.8W Surface Mount TO-263-3