Infineon · FETs & Power MOSFETs · MPN IPB025N08N3GATMA1
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| Gate Charge(Qg) | 206nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 2.89nF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 2.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 14.2nF |
| Type | N-Channel |
80V 120A 3.5V 300W 2.5mΩ@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS