Infineon · FETs & Power MOSFETs · MPN IPB024N08N5
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| Gate Charge(Qg) | 123nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 8.97nF |
| Current - Continuous Drain(Id) | 166A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 86pF |
| RDS(on) | 2.4mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.97nF |
| Type | N-Channel |
N-Channel 80V 166A 214W Surface Mount TO-263-3