Infineon IPB023N04NF2S

Infineon · FETs & Power MOSFETs · MPN IPB023N04NF2S

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Specifications

Gate Charge(Qg)68nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.78nF
Current - Continuous Drain(Id)122A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation158W
RDS(on)1.9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)98pF
Number1 N-channel
Input Capacitance(Ciss)4.8nF
TypeN-Channel

Technical details

N-Channel 40V 122A 158W Surface Mount TO-263-3

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