Infineon · FETs & Power MOSFETs · MPN IPB022N04LG
No reviews yet — be the first to review Infineon IPB022N04LG.
| Gate Charge(Qg) | 166nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 2.7nF |
| Current - Continuous Drain(Id) | 90A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 167W |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| RDS(on) | 2.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13nF |
| Type | N-Channel |
40V 90A 2V 167W 2.2mΩ@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS