Infineon · FETs & Power MOSFETs · MPN IPB021N10NM5LF2ATMA1
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| Output Capacitance(Coss) | 1.8nF |
|---|---|
| Pd - Power Dissipation | 375W |
| Configuration | - |
| Gate Charge(Qg) | 165nC |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.1V |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 1.6mΩ@15V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13nF |
375W 100V 3.1V 1.6mΩ@15V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS