Infineon · FETs & Power MOSFETs · MPN IPB020NE7N3G
No reviews yet — be the first to review Infineon IPB020NE7N3G.
| Gate Charge(Qg) | 206nC@10V |
|---|---|
| Drain to Source Voltage | 75V |
| Output Capacitance(Coss) | 3.22nF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 300W |
| RDS(on) | 2mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 14.4nF |
| Type | N-Channel |
N-Channel 75V 120A 300W Surface Mount TO-263-3