Infineon · FETs & Power MOSFETs · MPN IPB020N04N G
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| Gate Charge(Qg) | 120nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 140A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 167W |
| RDS(on) | 2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.7nF |
40V 140A 4V 167W 2mΩ@10V 1 N-channel TO-263-7 Single FETs, MOSFETs RoHS