Infineon · FETs & Power MOSFETs · MPN IPB019N08NF2SATMA1
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 186nC@10V |
| Current - Continuous Drain(Id) | 166A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF |
| RDS(on) | 1.95mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.7nF |
| Type | N-Channel |
80V 166A 3.8V 250W 1.95mΩ@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS