Infineon IPB018N06NF2S

Infineon · FETs & Power MOSFETs · MPN IPB018N06NF2S

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)108nC@10V
Output Capacitance(Coss)1.55nF
Current - Continuous Drain(Id)191A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation231W
Reverse Transfer Capacitance (Crss@Vds)63pF
RDS(on)1.49mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.3nF
TypeN-Channel

Technical details

N-Channel 60V 191A Surface Mount TO-263-3

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