Infineon · FETs & Power MOSFETs · MPN IPB017N08N5
No reviews yet — be the first to review Infineon IPB017N08N5.
| Gate Charge(Qg) | 178nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 177A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 1.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 16.9nF |
N-Channel 80V 177A 375W Surface Mount TO-263-3