Infineon · FETs & Power MOSFETs · MPN IPB016N08NF2SATMA1
No reviews yet — be the first to review Infineon IPB016N08NF2SATMA1.
| Gate Charge(Qg) | 170nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 1.9nF |
| Current - Continuous Drain(Id) | 170A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 83pF |
| RDS(on) | 1.65mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12nF |
| Type | N-Channel |
80V 170A 3.8V 300W 1.65mΩ@10V 1 N-channel N-Channel PG-TO263-3 Single FETs, MOSFETs RoHS