Infineon IPB014N04NF2S

Infineon · FETs & Power MOSFETs · MPN IPB014N04NF2S

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Specifications

Gate Charge(Qg)106nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)191A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.4V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)145pF
RDS(on)1.45mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.5nF

Technical details

N-Channel 40V 191A 3.8W Surface Mount TO-263-3

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