Infineon · FETs & Power MOSFETs · MPN IPB011N04NF2S
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| Gate Charge(Qg) | 210nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 201A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.4V |
| Pd - Power Dissipation | 3.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 272pF |
| RDS(on) | 1.15mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 15nF |
N-Channel 40V 201A 3.8W Surface Mount TO-263-3