Infineon · FETs & Power MOSFETs · MPN IPB011N04N G
No reviews yet — be the first to review Infineon IPB011N04N G.
| Output Capacitance(Coss) | 4nF |
|---|---|
| Pd - Power Dissipation | 250W |
| Configuration | - |
| Gate Charge(Qg) | 188nC |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF |
| RDS(on) | 0.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 16nF |
250W 40V 2V 0.9mΩ@10V 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS