Infineon · FETs & Power MOSFETs · MPN IPB011N04L G
No reviews yet — be the first to review Infineon IPB011N04L G.
| Gate Charge(Qg) | 346nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 180A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF |
| RDS(on) | 1.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 29nF |
40V 180A 2V 250W 1.1mΩ@10V 1 N-channel TO-263-7 Single FETs, MOSFETs RoHS