Infineon IPB010N06NATMA1

Infineon · FETs & Power MOSFETs · MPN IPB010N06NATMA1

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)243nC@10V
Output Capacitance(Coss)4.25nF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)260pF
RDS(on)1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)18.75nF
TypeN-Channel

Technical details

N-Channel 60V 180A 300W TO-263-7

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