Infineon IPAW70R950CE

Infineon · FETs & Power MOSFETs · MPN IPAW70R950CE

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Specifications

Gate Charge(Qg)15.3nC@10V
Drain to Source Voltage750V
Current - Continuous Drain(Id)7.4A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation68W
RDS(on)950mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)328pF

Technical details

750V 7.4A 3.5V 68W 950mΩ@10V 1 N-channel TO-220FP-3 Single FETs, MOSFETs RoHS

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