Infineon IPAW70R600CE

Infineon · FETs & Power MOSFETs · MPN IPAW70R600CE

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage750V
Current - Continuous Drain(Id)10.5A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation28W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)474pF

Technical details

750V 10.5A 3.5V 28W 600mΩ@10V 1 N-channel TO-220FP-3 Single FETs, MOSFETs RoHS

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