Infineon · FETs & Power MOSFETs · MPN IPAW60R600CE
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| Gate Charge(Qg) | 20.5nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 10.3A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 28W |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 444pF |
650V 10.3A 3.5V 28W 1 N-channel TO-220FP Single FETs, MOSFETs RoHS