Infineon IPAW60R280P7SXKSA1

Infineon · FETs & Power MOSFETs · MPN IPAW60R280P7SXKSA1

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Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)12A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation24W
RDS(on)280mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)761pF

Technical details

N-Channel 600V 12A 24W Through Hole TO-220-FP

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