Infineon IPAW60R280P7S E8228

Infineon · FETs & Power MOSFETs · MPN IPAW60R280P7S E8228

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage650V
Current - Continuous Drain(Id)12A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation24W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)214mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)761pF

Technical details

650V 12A 3.5V 24W 214mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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