Infineon · FETs & Power MOSFETs · MPN IPAW60R280CE
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| Gate Charge(Qg) | 43nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 19.3A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 32W |
| RDS(on) | 280mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 950pF |
650V 19.3A 3.5V 32W 280mΩ@10V 1 N-channel TO-220FP-3 Single FETs, MOSFETs RoHS