Infineon · FETs & Power MOSFETs · MPN IPAN80R450P7
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| Gate Charge(Qg) | 24nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 29W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 450mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 770pF |
800V 11A 3V 29W 450mΩ@10V 1 N-channel TO-220FP Single FETs, MOSFETs RoHS