Infineon · FETs & Power MOSFETs · MPN IPAN70R900P7S
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| Gate Charge(Qg) | 6.8nC@10V |
|---|---|
| Drain to Source Voltage | 700V |
| Current - Continuous Drain(Id) | 3.5A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 17.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 177pF |
| RDS(on) | 740mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 211pF |
700V 3.5A 2.5V 17.9W 740mΩ@10V 1 N-channel TO-220FP Single FETs, MOSFETs RoHS