Infineon · FETs & Power MOSFETs · MPN IPAN70R750P7S
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 8.3nC@10V |
| Drain to Source Voltage | 700V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 20.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 750mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 306pF |
700V 4A 3V 20.8W 750mΩ@10V 1 N-channel TO-220FP Single FETs, MOSFETs RoHS