Infineon · FETs & Power MOSFETs · MPN IPAN70R360P7SXKSA1
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| Gate Charge(Qg) | 16.4nC@10V |
|---|---|
| Drain to Source Voltage | 700V |
| Output Capacitance(Coss) | 11pF |
| Current - Continuous Drain(Id) | 12.5A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 26.5W |
| RDS(on) | 360mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 517pF |
| Type | N-Channel |
N-Channel 700V 12.5A 26.5W Through Hole TO-220-FP