Infineon · FETs & Power MOSFETs · MPN IPAN60R600P7SXKSA1
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| Gate Charge(Qg) | 9nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 7pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 21W |
| Reverse Transfer Capacitance (Crss@Vds) | 149pF |
| RDS(on) | 600mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 363pF |
N-Channel 600V 4A 21W Through Hole TO-220