Infineon · FETs & Power MOSFETs · MPN IPAN60R210PFD7S
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 330pF |
| RDS(on) | 210mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.015nF |
600V 10A 4V 25W 210mΩ@10V 1 N-channel TO-220FP-3 Single FETs, MOSFETs RoHS